Projects
The Center for Detectors designs, develops, and implements detectors to enable scientific discoveries.
NORDTECH: Quantum Ultra-broadband Photonic Integrated Circuits and Systems (QUPICS)
PI: Stefan Preble
October 2024 - October 2025
This project will develop the first 300 mm foundry fabrication platform for quantum systems, incorporating passive photonics, active components, and laser sources from the UV to the IR. Integrated systems spanning this broad wavelength range are critical for a range of photonics-heavy quantum system technologies including based on trapped ions and neutral atoms, for commercial and DoD-priority applications in metrology, sensing, quantum networking, and quantum computation (QC). Prototype systems will demonstrate functionality in high-fidelity single- and multi-qubit gates for QC, integrated modulation for large-scale systems, entangled photon pair sources and frequency conversion for networking, and integrated octave-spanning frequency combs and laser sources for field-deployable atom-based timekeeping. This functionality, integrated within a 300 mm wafer photonics platform, will be made broadly available through multi-project wafer (MPW) offerings to support and further efforts.
AIM Photonics BIO INSPECT
PI: Stefan Preble
September 2024 - February 2026
The aim of this project is to develop a system for performing in-situ (real-time) bio-sensing using photonic integrated circuits (PICs). Specifically, the BIO INSPECT program is requesting a sensor solution capable of identifying the concentration of metabolites or proteins with clinical precision. To date, most PIC-based sensor research has focused on one-time measurements. In this project, we will develop a system capable of making a series of measurements for applications relevant to bio-manufacturing.
Heterogeneous Quantum Networking
PI: Stefan Preble
June 2024 - May 2028
This project’s end-state goal is to develop and transition to foundries the building blocks of a heterogeneous quantum network and to combine these components into systems on chip (SOCs) to distribute entanglement between superconducting and trapped ion qubits. This project will leverage the partnerships in this proposal to develop quantum photonic integrated circuits (QPICs) for high-speed networking of quantum memories, quantum microwave to optical transducers, and number-resolving photon detectors, all of which can be transitioned to AIM process design kit (PDK) and NY CREATES fabrication to create a quantum provider/performer community.
BARDA ImmuneChip+ - Lung-Chip Inflammatory Nexus
PI: Stefan Preble
October 2024 - September 2025
In this project, RIT will support Phlotonics in the development of a system capable of making a series of measurements for applications relevant to the BARDA ImmuneChip+ program.
Development of a Sub-Kelvin Testbed for Characterization of On-Chip Far-Infrared Integrated Spectrometers
PI: Michael Zemcov
September 2024 - August 2026
The Experimental Astrophysics Laboratory at RIT is involved in a multi-institution collaboration to fabricate and test on-chip spectrometer technology. While we have made good progress, due to circumstances beyond our control we are losing collaborative device testing capability over time, and expect to lose access to the necessary testbeds entirely by late 2024. Though our technology development program has promising results, it is crucial for us to identify a new testbed facility in the near future. In this 24-month ATI program, we request funding to stand up a cryogen-free sub-K cryogenic testbed for on-chip spectrometer testing. We will design, fabricate, cryogenically commission the testbed, and finally test on-chip spectrometer devices, with the goal of achieving device characterization capability by late 2025.
NRT: Convergent Graduate Research Training for CMOS+X Semiconductor Technologies
PI: Jing Zhang
September 2024 - August 2029
Our NRT program at RIT aims to develop an innovative convergent graduate research training model for next-generation complementary metal-oxide-semiconductor (CMOS) +X (X = AI, biomedical, chemical, optoelectronic, photonic, nanoelectronic, quantum, and packaging) talents, in order to address this urgent national talent shortage. We plan to fulfill our convergent training and research goals in semiconductors by expanding on our existing Microsystem Engineering Ph.D. program with inclusions of trainees and resources from Ph.D. programs in Physics, ECE, Chemical Engineering, and Biomedical Engineering. Our NRT trainees will be equipped with both technical and professional skills needed for next-generation semiconductor technologies.
X-Ray and UV Optics for Light-Source and Astronomical Applications
PI: Zoran Ninkov
July 2024 - June 2026
Optimax develops high-precision optics and coatings for scientific and industrial applications. They are interested in expanding into the DUV/X-ray optics market, and they are seeking technical analysis and insight from RIT to support this development. It is known that the majority of applications for x-ray optics are to be found in medical, scientific (synchrotron beamlines and plasma diagnostics), and astrophysical instrumentation; Optimax is interested in the astrophysical and extreme-materials applications (not medical). At the optical systems level these applications share much in common.
RIT will perform a survey and measurements of instrumentation systems that utilize x-ray optics, including x-ray source optics (beamlines), x-ray collimation/imaging, and DMDs with emphasis on scientific and astrophysical instrumentation.
Beginnings: Empowering Minds through Experiential Learning, Research, and Career Growth Opportunities in Emerging Microelectronics (EMERGE-MICRO)
PI: Parsian Katal Mohseni
July 2024 - June 2026
Rochester Institute of Technology proposes to develop an experiential learning initiative that is intended to serve as a pilot model toward sustaining a vibrant future for the US semiconductor industry. The proposed program will establish a comprehensive approach that leverages collaborations between academia and industry. This effort will cultivate a skilled and adaptable workforce for the emerging technology fields of semiconductors and microelectronics. Moreover, it will support the continued growth of the microelectronics industry and safeguard the nation's technological leadership on the world stage.
In(Ga)As/GaAs Quantum Dot Development for SWIR Sensing Applications by MOCVD
PI: Parsian Katal Mohseni
May 2024 - February 2025
RIT will design and conduct crystal growth of In(Ga)As/GaAs quantum dots on GaAs substrates via metalorganic chemical vapor deposition, targeting room-temperature photoluminescence emission at telecom wavelengths. Materials characterization will be performed through photoluminescence spectroscopy, X-ray diffraction, atomic force microscopy, and transmission electron microscopy.
Efficient Non-Linear Optical Hybrid Quantum Photonic Integrated Circuits Fabricated with CMOS Foundry Compatibility
PI: Stephan Preble
February 2024 - February 2025
The overall goal of this AF SBIR effort is to efficiently integrate a second order non-linearity into the well-established Silicon on Insulator (SOI) foundry-scale fabrication process. The initial demonstration will target fabrication of hybrid quantum photonic integrated circuits (Q-PICs) for interfacing atomic memories with transitions in the visible wavelength range across existing telecom fiber optic links. AdvR and RIT will work together to demonstrate robust measurable coupling between the SiN waveguides and a bulk periodically poled NLO substrate. The key innovation is the efficient integration of foundry fabricated 300 mm Silicon Nitride (SiN) waveguides with small period, periodically poled potassium titanyl phosphate (PPKTP), for generation of visible light photons and efficient electro-optic modulation. Utilizing bulk KTP instead of thin film lithium niobate will ease the fabrication constraints since KTP has a lower optic index (~1.8) and thus its thickness does need to
Applications of Modeling to Extend Nanolithography
PI: Stephan Preble
December 2023 - June 2024
The application of nanolithography to device technology continues
beyond 5nm nodes as EUVL, High NA EUVL, optical extensions, multiple
patterning, and other alternatives are considered. The demands on
lithography systems and processes become increasingly difficult.
Collaboration between groups associated with the research,
development, application, and modeling of systems and processes is
critically important for the success of future device generations.
Rochester Institute of Technology (RIT) and Siemens Industry
Software Inc. (SISW) share a common interest to explore the
challenges involved. To carry this out, continuation of an
established internship program is proposed to allow the placement of
a Ph.D. student from RIT's Microsystems Engineering program in the
College of Engineering at IMEC in Belgium, supported by SISW to
carry out these activities of common interest.
Conference: Diffuse Cosmic Backgrounds and the Low Surface
Brightness Universe
PI: Micheal Zemcov
March 2024 - April 2024
The background radiation at optical and near-infrared wavelengths is
thought to be sources largely by stars in galaxies, but tensions in
recent measurements indicate that our census of galaxy populations
might be incomplete. A significant fraction of light might be
sourced by low surface brightness stellar populations and new
high-redshift populations whose roots trace back surprisingly early
in the history of galaxy assembly. In this conference, we will bring
together experts in the history of galaxy formation, low surface
brightness populations, the cosmic background light, and
astrophysical theory to discuss how to reconcile the observations
and their implications for cosmic structure formation.
Rochester Education & Workforce Development 2024
PI: Stephan Preble
April 2024 - March 2025
This is year 3 of the AIM Photonics Rochester Education & Workforce
Development Project.
Advancing Radiation-Hardened CMOS Deterctors for NASA Missions
PI: Donald Figer
January 2024 - January 2027
We propose a comprehensive program to advance radiation-hardened
single-photon counting and photon number resolving optical imaging
detectors for use in future NASA missions. These detectors use very
low-capacitance sense nodes that produce a large voltage response to
a single proton. Several companies have commercialized early
versions in multi-megapixel format. They operate at near-room
temperature and have negligible dark current. Previous results
obtained by the proposing team suggest that the degradation in dark
current after irradiation up to 50 krad(Si) is at least two orders
of magnitude less than for commonly-used CCDs, and better than for
previously-available CMOS imagers. The proposed program aims to
minimize the transient and long-term effects of radiation in NASA
missions that have a wide range of orbital trajectories, including
LEO, L2, and near Jupiter's moons where exposure is in the Mrad(SI)
level. The program will use existing detectors from several vendors.
Silicon Photonics Integration
PI: Stephan Preble
July 2023 - July 2024
RIT will be supporting Phase Sensitive Innovation in SBIR project
NAVY N23B-T034: Silicon Photonics Integration. The focus will be on
silicon photonic integrated circuits under extreme conditions.
RIT Semiconductor Fabrication Laboratory
Co-PI: Stephan Preble
March 2023 - March 2024
RIT's semiconductor fabrication laboratories were built in the
mid-1980s to provide a state-of-the-art platform for the first
ABET-accredited Bachelor of Science in Microelectronics Engineering.
Today, the laboratories serve as a backdrop for educating students
enrolled in RIT's BS, MS, and PhD programs. The current $2M project
will be used to replace aging tools and equipment so that the
facility can continue to serve its dual education and research
mission. Approximatelyhalf of the current project will be used to
replace or upgrade the cleanroom infrastructure and utilities.
Examples include air handling and filtration systems, process
vacuum, gas handling and monitoring, waste neutralization, and wet
processing benches. The remainder of the funding will be used to
replace and upgrade processing and metrology tools, including
thermal processing furnaces, photoresist coating and developer
tracks, and various inspection tools.
RIT/L3Harris Quantum Information Science and Technology
Collaboration
PI: Gregory Howland
March 2023 - March 2024
The aim of this work is to develop silicon quantum photonic
integrated circuits for high-dimensional quantum information
processing.
Advancing Quantum Metrology and Sensing Education: Concepts,
Curricula, and Research on Student Learning
Co-PI: Gregory Howland
January 2023 - December 2023
The National Quantum Initiative Act established quantum technology
as a national priority because quantum systems will lead to
significant improvements in computing, communication, and sensing.
However, quantum sensing has received little attention in the media,
curriculum development, and education research despite diverse
application areas and near-term impacts. This proposal would support
three goals: (1) Defining the major concepts and canonical systems
of quantum metrology, sensing, and imaging through interviews with
experts. (2) Developing flexible and adaptable curricular materials
(e.g., lesson plans, active learning tutorials, clicker questions,
homework problems). (3) Conducting foundational research on student
learning of quantum sensing and metrology. The project will improve
the quality of QIS instruction across a range of institutions and
levels to better support learners from diverse disciplinary
backgrounds and foster inclusive teaching through active learning.
Rochester Education & Workforce Development 2023
PI: Stephan Preble
January 2023 - December 2023
AIM Photonics Academy (AIM Academy) is responsible for building an
agile workforce that can opportunistically reskill and upskill to
steadily grow the US photonic integrated circuits (PIC) industry.
This is year 2 of the AIM Photonics Rochester Education & Workforce
Development Project.
Development of High Dynamic Range (HDR) Capabilities of CID
Sensors
PI: Zoran Ninkov
January 2023 - August 2024
Charge Injection Device (CID) detector arrays are designed and
fabricated with two capabilities not found in most competing
technologies, namely random addressability and non-destructive
readout (NDRO). This permits many novel readout modalities to be
implemented that have not been explored. For example, the ability to
segment an image after a rapid initial “guide” exposure into
brightness level that then permits bright regions to be exposed,
readout, reset and continue to be expose multiple times while
fainter regions are integrated for longer. This and other readout
approaches depend on the stability of the addressing, reset and
readout which will be studied.
Characterizing Single-photon Sensing CMOS Image Sensors for NASA
Missions
PI: Donald Figer
September 2023 - August 2025
The proposed project seeks to advance the technology readiness level
(TRL) of commercial off-the-shelf (COTS) large-format single-photon
sensing and photon-number resolving CMOS (SPSCMOS) optical image
sensors for use in future NASA flagship missions, such as for the
focal plane of the large optical mission recommended by the Pathways
to Discovery in Astronomy and Astrophysics for the 2020s. The
proposed program includes detector characterization in the
laboratory, at a telescope, and after high energy particle
irradiation. The characterizations include read noise, dark current,
quantum efficiency, persistence, and linearity. A telescope
observation program will demonstrate the technology, preferably on a
large telescope, such as the California Institute of Technology Hale
telescope at the Palomar observatory.
Collaborative Research: Its TIME! Mapping cosmic star formation
history with CO and CII
PI: Michael Zemcov
September
2023 - August 2026
The Tomographic Ionized carbon Mapping Experiment (TIME) is a
mm-wave grating spectrometer designed to perform line intensity
mapping measurements of CII and CO to trace the formation of
structure in the early universe. This proposal funds a graduate
student to develop control software for the instrument, data
reduction and analysis, and scientific interpretation of the
observations over a 3-year program.
Development of High Dynamic Range (HDR) Capabilities of CID
Sensors
PI: Zoran Ninkov
January - June 2023
Charge Injection Device (CID) detector arrays are designed and
fabricated with two capabilities not found in most competing
technologies, namely random addressability and non-destructive
readout (NDRO). This permits many novel readout modalities to be
implemented that have not been explored. For example, the ability to
segment an image after a rapid initial "guide" exposure into
brightness level that then permits bright regions to be exposed,
readout, reset and continue to be expose multiple times while
fainter regions are integrated for longer. This and other readout
approaches depend on the stability of the addressing, reset and
readout which will be studied.
Rapid Assistance (for) Coronavirus Economic Response (RACER)
PI: Stefan Preble
March 2022 - February 2024
Our proposed effort will complete basic science, engineering, and
manufacturing challenges that will enable development of the first
point-of-care (POC) diagnostics system centered on integrated
photonics. The overall system will consist of inexpensive,
disposable photonic test cards able to detect the human response to
multiple viral pathogens, and a portable, low-cost assay reader. Our
proposed system will leverage the capabilities of AIM Photonics
(photonic sensor manufacturing).
Quantum Dot Inspired Overcoating of uLED Mesas
PI: Jing
Zhang
July 2022 - June 2023
Copper contamination is often associated with poor performance in
III-P LEDs. For this reason, copper contacts and copper
electrodeposition methods are frequently avoided in III-P LED
manufacturing. However, there is sparse hard evidence that copper
ions degrade LED performance. This project seeks to directly test
the hypothesis, that copper ion contamination reduces LED
efficiency.
Composing the History of Near-IR and Optical Light Production
with the Cosmic Infrared Background Experiment-2 (CIBER-2)
PI: Michael Zemcov
September 2022 - August 2026
The Cosmic Infrared Background ExpeRiment-2 (CIBER-2) is a
sounding-rocket borne instrume designed to measure anisotropy in the
Extragalactic Background Light (EBL) in 6 broad bands covering the
optical and near-infrared (near-IR). CIBER-2 builds on the
measurement techniques developed and successfully demonstrated by
CIBER-1, and provide a testbed for so of the technologies and
techniques that will be employed by the upcoming SPHEREx mission. U
high-sensitivity, wide-angle, multi-color anisotropy measurements,
CIBER-2 will elucidate the his of intra-halo light (IHL) production
and carry out a deep search for extragalactic background
fluctuations associated with the Epoch of Reionization. This
proposal requests support for 2 fligh CIBER-2 and the analysis and
interpretation necessary to extract scientific results from the
data.
Developing the largest IR detectors for future NASA focal planes
PI: Don Figer
September 2022 - August 2025
The primary goal of the HELLSTAR project is to produce the highest
pixel count IR detector ever made for astronomy. We aim to design,
fabricate, and characterize a new large format detector using
existing ROICs created by Sensor Creations Inc. and the new MCT/Si
detector substrate developed by our team and Raytheon Vision
Services. Subsequent phases of the project will focus on the
development of new readout hardware and software, as well as the
characterization and optimization of the HELLSTAR device. The final
phase will consist of deployment of the device to a telescope to
demonstrate its capabilities, as well as possible deployment in
Antarctica via the Cryoscope project. The HELLSTAR detectors will
pave the way for extremely large IR focal planes in the next
generation of NASA space and ground missions.
Polarimetric Observer Light Analyzing Research (POLAR) Mission
PI: Zoran Ninkov
January 2022 - June 2023
This project plans to explore the use of Polarization Sensitive
Focal Plane Arrys for use in small satellite missions. The project
will investigate the development of such harware, the calibration of
such devices and the incorporation of software to provide near real
time information.
Development of DMD Devices
PI: Zoran Ninkov
March 2022 - August 2024
The Sensor Systems Subdivision at Aero Corporation will engage with
the research group of Professor Zoran Ninkov of the Center for
Imaging Science (CIS) at the Rochester Institute of Technology (RIT)
in a collaborative research program to develop a key MEMS component
that is optimized for use in the infrared.
Hybrid and Heterogeneous Integration of PICs for RF Photonic
Imaging Systems
PI: Stefan Preble
September 2022 -
February 2024
The goal of this collaborative effort is to develop high-density
heterogeneous and hybrid photonic integrated circuit (PIC) packaging
techniques to support the demonstration of an analog RF photonic
imaging system-in-a-package.
Studies of the Diffuse Optical Background with New Horizons
PI: Michael Zemcov
September 2018 - September 2022
The goal of this project is to measure the cosmic optical background
(COB), which is the sum of all emission from sources beyond the
Milky Way at optical wavelengths, using images taken by the Long
Range Reconnaissance Imager (LORRI) on New Horizons. This allows for
a comparison between this measurement and all expected sources of
emission such as galaxies and potential identification of the source
of any excess component of diffuse emission.
Over the past year, we have estimated LORRI's dark current stability and calibrated our selected LORRI data in preparation for measuring the COB. We have used a point spread function (PSF) reconstruction algorithm to combine cut-outs of multiple stars in each image and deconvolved these stacked PSFs to return an estimate of the optical PSF. We have also been working on estimating astrophysical foregrounds so that they can be effectively removed from the LORRI images for a more accurate measurement of the COB. These include the integrated star light (ISL), which results from faint stars that cannot be masked out, and the diffuse galactic light (DGL), which is light that is reflected from dust in the Milky Way.
Future plans include improved estimates of the ISL and DGL resulting in a definitive measurement of the COB, estimates of LORRI's pointing stability, and a similar measurement of the COB using the LEISA instrument on New Horizons.
A Single Photon Sensing and Photon Number Resolving Detector for
NASA Missions
PI: Don Figer
November 2019 - May 2022
Single photon counting large-format detectors will be a key
technology for future NASA Astrophysics missions such as the LUVIOR
and HabEx mission concepts. The goal of this project is to
characterize and demonstrate single photon-sensing and photon-number
resolving CMOS image sensors, developed by Dr. Eric Fossum
(Dartmouth College) and his team of graduate students. Following the
sensor characterization, we will irradiate one device to simulate
damage from high-energy radiation in space while we demonstrate
astronomical observations with another device at a telescope. In
collaboration with Dartmouth, we will redesign the detector to
achieve the science requirements of future NASA missions.
This project involves the work of numerous students, including one Dartmouth College graduate student, four RIT graduate students and seven RIT undergraduate students. The team fabricated the system hardware and electronics necessary to interface and control the QIS with our existing automated test suite. Now, the team is working to complete the Field Programmable Gate Array (FPGA) hardware program, which is responsible for generating system clocks and managing data transfer from the image sensor to a computer.
MISE (The Mid-IR Sky Explorer)
PI: Michael Zemcov
June 2020 - June 2021
Imaging polarimeters utilizing the division-of-focal technique
present unique challenges during the data reduction process. Because
an image is formed directly on the polarizing optic, each pixel
"sees" a different part of the scene; this problem is analogous to
the challenges in color restoration that arise with the use of Bayer
filters.
Although polarization is an inherent property of light, the vast majority of light sensors (including bolometers, semiconductor devices, and photographic emulsions) are only able to measure the intensity of incident radiation. A polarimeter measures the polarization of the electromagnetic field by converting differences in polarization into differences in intensity. The microgrid polarizer array (MGPA) divides the focal plane into an array of superpixels. Each sub-pixel samples the electric field along a different direction, polarizing the light that passes through it and modulating the intensity according to the polarization of the light and the orientation of the polarizer. We are actively looking at techniques for hybridizing microgrid polarizer arrays to commercial CID, CCD, and CMOS arrays.
Phase II: New Infrared Detectors for Astrophysics
PI: Don
Figer
September 2015 - August 2022
This program will have a profound impact across ground-based and
space-based astronomy by dramatically reducing the cost of infrared
detectors for existing facilities, as well as the next generation of
extremely large telescopes. The project is continuing development of
a new material system for use in astronomical infrared array
detectors. The devices use HgCdTe grown on Silicon using Molecular
Beam Epitaxy. In Phase I of this project, the NSF ATI program funded
two cycles of design, fabrication, and testing. The devices made in
this phase of the project show that the technology can meet the
astronomy requirements pending further development. Testing shows
that there are several challenges that prevent the devices in hand
from satisfying these requirements. In this second phase, the Center
for Detectors is developing a series of devices with improved design
and processing. The approach is to reduce the number of material
defects while maintaining high short-wavelength quantum efficiency
by using proven designs. Given that these previous designs have
successfully been used to address the observed non-idealities, it is
believed that the new activities will be successful. The work
includes: growth of new material using a thick buffer layer design,
fabrication of twelve FPAs in two designs, and extensive testing
between the fabrications of the two designs.
This project is advancing the knowledge of a material system that has great promise for infrared detector technology. It is also enhancing the capabilities of infrared instrumentation in astronomy by reducing cost and potentially improving performance when compared to what is available with existing technology. The technical approach has great merit because it was developed over the past 15 years and during Phase I of the project. The plan features a tight connection between design at Raytheon Vision Systems (RVS) and testing in the Center for Detectors at the Rochester Institute of Technology, continuing over 15 years of collaboration between RVS and the PI.
PIC: Hybrid Silicon Electronic-Photonic Integrated Neuromorpohic
Networks
PI: Stefan Preble
September 2018 - August
2022
The overall goal of this project is to demonstrate hybrid silicon
electronic-photonic integrated neuromorphic networks. The proposed
paradigm leverages the power of optical interference to realize high
performance neuromorphic computing networks. Pho tonic
implementations of neural networks brings the inherent advantage
that light can easily perform computational tasks that are
traditionally challenging to do in electronic-only implementations
(e.g. a Fourier transform can be done optically by simply passing
light through a lens). However, in order to realize neural networks
that significantly improve over today's state-of-art, it is
necessary to leverage electronics due to the challenges with
realizing photonic memory and amplification. Consequently, we will
leverage the advantages of both electronics and photonics to realize
neural networks that operate with high-speed and higher performance.
Development of High Efficiency Ultraviolet Optoelectronics:
Physics and Novel Device Concepts
PI: Jing Zhang
March
2018 - February 2023
III-nitride-based semiconductor (AlN, GaN, and InN) ultraviolet (UV)
optoelectronics have great potential in replacing bulky mercury
lamps and excimer lasers attributing to their compact size, lower
operating voltage, excellent tunability, higher energy efficiency
and longer lifetime. As a result, wide-bandgap AlGaN-based UV
light-emitting diodes (LEDs) and laser diodes have attracted
significant attentions recently as new UV light sources for various
applications such as semiconductor photolithography, resin curing,
water and air purification, sterilization, and biological/chemical
sensing.
The objective of this project is to develop fundamental physics from the III-Nitride emitters and to propose novel materials and device concepts to address the issues from semiconductor UV LEDs, in order to achieve UV emitters with significantly improved efficiency covering 220 nm ' 300 nm spectral regimes. The research efforts will be divided into three major thrusts: Thrust 1: Development of delta quantum well (QW) UV LEDs covering ~240 nm ' 250 nm; Thrust 2: Exploration of alternative UV active regions: III-Nitrides and beyond; and Thrust 3: Novel UV emitter device concepts.
QLCI-CG: Quantum Photonics Institute
PI: Don Figer
September
2019 - August 2021
Quantum-photonic technologies will form the backbone of future
quantum networks, interface/manipulate atomic and solid state
platforms, realize sensors and imagers, and process quantum
information. Scaling quantum optical systems to many components
requires a paradigm-shift from traditional bulk-optics to stable,
integrated platforms. Most quantum integrated photonics (QIP)
research groups fabricate their devices in-house at academic
institutions, but there is increasing interest in instead using
foundry-based processes, such as those our NSF Quantum Leap
Challenge Institutes Conceptualization Grant (QLCI-CG) team are
developing for the American Institute for Manufacturing (AIM)
Photonics.
In this successful QLCI CG, the RIT lead team proposed and executed planning activities to allow the team to write a compelling full proposal for a Quantum Photonic Institute in August 2020. This Quantum Photonic Institute would create and use the only U.S-based open-access Quantum Foundry for quantum photonic circuits, including spectral-domain quantum processors, large-scale programmable unitary circuits, high-dimensional quantum light sources, single-photon detectors, and single-photon emitters. The proposed Institute includes a strong workforce and development plan which includes, K-12 and Informal Science Education, recruiting in quantum, expanding a hands-on QIST Education Lab at RIT for undergraduate and graduate students and for on-campus workshops, creating a Women in Quantum community, supporting inclusion and career preparation in QIST graduate education, internship/co-op programs for undergraduate and graduate students, continuing learning for industry professionals, and bringing QIST to all of stem.
Probing the History of Structure Formationthrough Intensity
Mapping of the Near Infrared Extragalactic Background Light
PI: Michael Zemcov
September 2017 - September 2021
In 2017, the CfD was selected to receive a NASA Earth and Space
Science Fellowship (NESSF), which supports a student's work on the
instrument integration and data analysis of CIBER-2. NESSF support
enables the student to participate fully in CIBER-2 and gain
invaluable experience working on a suborbital project. This
experience includes integrating and characterizing the rocket-home
instrument at flight facilities; analyzing and interpreting
observational data into science findings; and communicating progress
to the CIBER-2 collaboration, NASA, and the public.
Development of Quantum Dot Coated Detector Arrays
PI:
Zoran Ninkov
July 2019 - June 2021
There are many interesting things to see in the ultraviolet (UV).
Lithography for integrated circuit production is exposed with 193 nm
light with future, analytical instruments use UV emissions to
identify materials, and honeybees' view of flowers include the UV
region. Current silicon CMOS or CCD based detectors used in standard
digital cameras do a poor job of recording UV images. Switching to
exotic materials or polishing the detector until it is so thin that
it is flexible and almost transparent may improve the ability to
detect UV light. Both of those options are very expensive to
fabricate. A different approach is to apply a coating of
nanometer-scale materials to the surface of a detector chip to
convert the incoming UV light to visible light. Standard detector
chips more readily record visible light. We use an inkjet printer to
deposit the quantum dots. This research has developed a method of
coating detector arrays with nanomaterials and applied it to improve
the ability of detectors to record UV and blue light.
On-Chip Quantum Photonic Sensors Using Entagled Photons and
Squeezed States
PI: Stefan Preble
October 2019 -
September 2021
As a part of this project, we have designed and tested new
components that are more efficient and effective at manipulating the
physical properties of light. These results have also demonstrated
unique applications in quantum information science specifically for
processing and sensing. We have also started laying out the design
work for a different integrated photonics platform, aluminum
nitride, which will be fabricated in a standard CMOS foundry.
Wafer-Level Electronic-Photonic Co-Packaging
PI: Stefan
Preble
September 2018 - October 2021
The objective of this program is to develop flexible, low-cost
packaging techniques for large scale, integrated optoelectronic
systems based on heterogeneously integrated photonic and electronic
chips.
Artificial Intelligence RF Photonic Signal Classifier
PI:
Stefan Preble
August 2020 - June 2022
The objective of this project will be to prove the feasibility of an
RF signal classifier implemented using a photonic neural network. In
this project a photonic neural network (PNN) would be developed to
classify RF signals a 3-30GHz. The goal is to demonstrate that the
PNN can correctly classify signals.
SPEHREx: An All Sky Spectral Survey, Phase B
PI: Michael
Zemcov
May 2019 - August 2024
SPHEREx (the Spectro-Photometer for the History of the universe,
Epoch of Reionization, and ices Explorer) is a proposed NASA
mid-range explorer (MIDEX) mission that will perform an all-sky
spectral survey in near-infrared bands. NASA selected SPHEREx for
development in February 2019. SPHEREx is designed to map the
large-scale structure of galaxies in the universe to shed light on
the first instants of the universe, measure the light produced by
stars and galaxies over time by using multiple wavelength bands, and
investigate how water and biogenic ices influence the formation of
planetary systems by studying the abundance and composition of
interstellar ices. RIT is responsible for the ongoing development of
the data analysis pipeline, with plans for future publications on
the analysis methods that Zemcov's team is developing. We recently
submitted a paper on advanced point spread function reconstruction
techniques for the instrument. Over the past year, the SPHEREx team
has remained busy executing the program's Phase B, during which
final mission trades are studied and preliminary designs are drawn
up. We expect a preliminary design review sometime in autumn 2020,
after which we will begin the instrument build phase. SPHEREx is
currently scheduled to launch in 2024 and is funded for a full
mission through 2027.
Diagnosing, Addressing, and Forecasting CIB Contamination in
Spectral Measurements of the Sunyaev Zel'dovich Effect
PI:
Michael Zemcov
May 2019 - May 2022
We have updated and improved our analysis of the ICM properties for
the cluster RX J1347.5-1145. Significant improvements have been made
to the simulated SPIRE map pipeline in order to reduce the error on
the amplitude of the Sunyaev-Zeldovich effect. We have shifted to
using an older empirical model for generating point sources in our
images in order to better fit the high flux end of the map.
Development of 400 nm GaN laser diode
PI: Jing Zhang
March
2021 - February 2022
Escalating trends in global energy consumption mandates like
increased national energy independence and mounting alarm regarding
anthropogenic climate change, all demand improved sustainable energy
solutions. While the theoretical power generation potential of solar
photovoltaics (PV) in the United States is greater than the combined
potential of all other renewable resources, substantial market
penetration of PV and realization of grid-parity have been
obstructed by high materials and manufacturing costs, as well as
limitations in solar power conversion efficiencies (PCE). A pressing
need exists for tandem solar cells utilizing two dissimilar
materials (TDM) or more that are capable of PCE values beyond the
~30% Shockley-Queisser limit. In this program, we explore a
transformative, bifacial solar cell design that employs arrays of
TDM III-V compound semiconductor nanowires in tandem with a thinned,
intermediate Si sub-cell. The use of epitaxial nanowire arrays
overcomes the lattice matching criteria and enables direct III-V on
Si monolithic integration. This design eliminates the need for
high-cost wafers, growth of graded buffer layers, and
anti-reflection coatings, while permitting ideal solar spectrum
matching and capture of albedo radiation. The high risk-high payoff
and exploratory research fits the NSF EAGER program, as it involves
a radically unconventional approach with transformative potential to
enable cost-effective manufacturing of high-efficiency TDM solar
cells.
The technical approach of this EAGER project relies on selective-area heteroepitaxy of a GaAsP (1.75 eV) nanowire array on the top surface of a thinned Si (1.1 eV) sub-cell by metal-organic chemical vapor deposition. A bifacial, three dissimilar materials, tandem junction device is formed via monolithic integration of a backside InGaAs (0.5 eV) nanowire array. The vertical nanowires comprising the top- and back-surface arrays contain radially segmented p-i-n junctions serially connected to the central Si sub-cell via epitaxial tunnel junctions. This design enables absorption of broadband incident solar energy as well as albedo radiation. Standard lattice-matching constraints are overcome via strain relaxation along nanowire free surfaces. Therefore, ideal spectral matching is realized without a need for graded buffer layers or dislocation mediation strategies. Use of vertical nanowire arrays with coaxial p-i-n junction geometries permits key advantages, including near-unity absorption of solar irradiance at normal and tilted incidence without the use of anti-reflection coatings, decoupling of photon absorption and carrier collection directions, and dramatic reduction of 95% in epitaxial volumes. Rigorous modeling of device parameters will be iteratively coupled with extensive materials characterization and property correlation experiments for optimization of III-V sub-cell structure on the single nanowire and ensemble array levels. The ultimate target of this work is demonstration of a functional bifacial, three dissimilar materials, nanowire-based tandem junction solar cell with one Sun power conversion efficiency of 30% or better.
Measuring Reionization and the Growth of Molecular Gas with TIME
PI: Michael Zemcov
September 2019 - August 2022
While waiting for the TIME instrument's second deployment, the team
has focused on improving the quicklook data analysis infrastructure
and simulated data pipeline. Work continued on an advanced biasing
technique to quickly determine the state of almost 2000 TES
bolometers, and then electrically bias them for optimal detection of
sub-mm photons. This involved writing a script for determining the
optimal bias during lab conditions, and then adjusting this bias for
changes in loading due to atmosphere and astrophysical sources. The
incremental biasing technique is accomplished by choosing the most
conservative bias and slowly stepping down until a maximum number of
detectors can be reached. Biasing too low renders the detectors
insensitive to on sky photons. This process is being automated for
quick calibration of the instrument between science observations.
Updates were also made to the map making code which is responsible for converting raw detector timestreams into science output. To test the systematics and biases introduced into the data from the analysis pipeline, the team helped create simulated science data. TIME collaborators created artificial science sources, mimicking some of the planets observed in the last engineering run, and added atmospheric noise realizations. The team provided a simulated telescope scanning script which sampled this data in the appropriate sky configuration and output realistic detector timestreams. After these are run through the map making pipeline, the difference between the output maps and the input simulated sources should provide correctional factors used in the real analysis.
Development of an On-Chip Integrated Spectrometer for Far-IR
Astrophysics
PI: Michael Zemcov
July 2020 - July 2022
The primary objective is the production of an integrated on-chip
spectrometer prototype operable at 150 micron wavelength. The
spectrometer will be integrated with a kinetic inductance device
(KID) detector array on the same chip, integrating the light
dispersion and detection on a single Si wafer. We target a spectral
resolution of R=I00, and plan to demonstrate at least 8 bands around
the central wavelength. Spectral testing of the spectrometer
prototype will be carried out using a compact Fourier Transform
Spectrometer (FTS) that is being developed at RIT.
The FTS consists of a simple interferometer fed by a hot or cold thermal source, with path length difference adjusted using a linear actuator. The FTS is designed to be operated within a small cryostat to reduce stray radiation loading, and coupled either directly or via a small vacuum window to match that of the test bed. Varying the path length introduces a changing pattern of interference fringes at the detector under test, which will be analyzed to reconstruct the detector response as a function of frequency. The output of the FTS itself will be characterized using a laboratory bolometer system. Currently a warm version of the FTS system is being tested to aid in the development of software and integration of the final cold design. Once warm testing is finished we will modify this existing system for cryogenic operation.
The Development of Digital Micromirror Devices for use in Space
PI: Zoran Ninkov
May 2014 - May 2018
This project is developing a commercially-available Digital
Micromirror Device (DMD) with an ultraviolet transparent window
suitable for use in a multi-object spectrograph (MOS) in a future
NASA Explorer Mission. A large spectroscopic survey requires a MOS
capable of recording the spectra of hundreds of galaxies in a single
exposure. The MOS must have adjustable slits to eliminate confusion
with nearby sources and to block out unwanted zodiacal background,
which would otherwise swamp the light from these faint galaxies. The
MOS should have access to the far-ultraviolet (120-200 nm) radiation
emitted by a z~1 galaxy because this spectral region has a rich set
of diagnostics of stars, gas, and dust in the galaxy. Access to the
blue-red spectral regions (200-800 nm) is also essential for
determining the precise redshift of a galaxy, its stellar mass,
abundances of the elements, and for characterizing dust extinction.
Because the light from a z~1 galaxy is redshifted before reaching
us, a large spectroscopic survey should be sensitive over the
spectral interval, 200-1600 nm.
Integrated Quantum Photonics for Photon-Ion Entanglement
PI: Stefan Preble
October 2014 - September 2018
The primary objective of this project is the realization of an
integrated photonics platform compatible with photon-ion
entanglement. The platform will consist of photon sources and
entangling circuits that interface with the visible/UV wavelengths
of ion (such as Yb+, Ca+, Be+, Mg+, Sr+, Ba+, Zn+, Hg+ and Cd+)
transitions. The challenge with realizing such a platform is that
integrated photonic chips are not well developed at visible
wavelengths because of the traditional focus on telecom wavelength
compatibility. We are developing a platform that does operate at
short wavelengths by using Aluminum Nitride (AlN), which is a large
bandgap semiconductor that is transparent to the deep-UV. In
parallel, we are leveraging our successes in quantum integrated
photonics in telecom-compatible platforms, particularly silicon
photonics. This will allow rapid validation of high performance
photon sources, entanglement circuits and quantum sensors. These
circuits will then be transitioned to the new visible/UV platform,
or interfaced with ions directly by using frequency conversion
Wideband Quantum Photonic Integrated Circuits for Highly
Non-degenerate Photon Pair Entanglement
PI: Stefan
Preble
June 2020 - November 2020
The overall goal of this project is to develop and integrate Si
photonics based wideband Quantum Photonic Integrated Circuits
(Q-PICs) efficiently and robustly with highly nonlinear polarization
entangled photon pair generating waveguides. The wideband Q-PICs can
provide spectral filtering, timing compensation and low-loss routing
to on-chip photonic gates for quantum processing. This project
demonstrated the feasibility of maintaining robust, high efficiency
coupling between an arrayed highly non-degenerate photon pair source
and a hybrid Si/SiN Q-PIC. The key innovation in this effort is butt
coupling a periodically poled Potassium Titanyl Phosphate (KTP)
waveguide-based wavelength division Multiplexer (WDM) to the hybrid
Q-PIC, which is fabricated with both Si and SiN waveguides for low
loss transmission of the highly non-degenerate wavelengths
(1550/810). High photon pair generation was demonstrated with high
efficiency coupling to the Q-PIC.
RIT/L3Harris Quantum Information Collaboration
PI: Stefan
Preble
Yearly
L3Harris has partnered with RIT on experiments and analysis focused
on quantum information processing for communication, sensing, and
computing. The exploratory partnership provides L3Harris access to
FPI's laboratory space and researchers and students.
Analysis of the Optical Properties of Digital Micromirror
Devices in the Ultraviolet Wavelength Regime
PI: Zoran
Ninkov
April 2020 - December 2021
RIT proposes to support the efforts "The Space Telescope Ultraviolet
Facility (The STUF)" project led by STScl PI Mario Gennaro. RIT will
provide digital micromirror devices (DMDs) with standard protective
windows replaced by ultraviolet transparent windows appropriate for
studies of DMDs optical properties in the ultraviolet regime. Our
proposal includes also a request to support a student from RIT for a
two-year period.
Bifacial III-V Nanowire Array on Si Tandem Junctions Solar Cells
PI: Parsian Mohseni
May 2017 - October 2020
Escalating trends in global energy consumption, mandates for
increased national energy independence, and mounting alarm regarding
anthropogenic climate change all demand improved sustainable energy
solutions. While the theoretical power generation potential of solar
photovoltaics (PV) in the United States is greater than the combined
potential of all other renewable resources, substantial market
penetration of PV sand realization of grid-parity have been
obstructed by high materials and manufacturing costs, as well as
limitations in solar power conversion efficiencies (PCE). A pressing
need exists for tandem solar cells utilizing two dissimilar
materials (TDM) or more that are capable of PCE values beyond the
~30% Shockley-Queisser limit. In this program we explore a
transformative, bifacial solar cell design that employs arrays of
TDM III-V compound semiconductor nanowires in tandem with a thinned,
intermediate Si sub-cell. The use of epitaxial nanowire arrays
overcomes the lattice matching criteria and enables direct III-V on
Si monolithic integration. This design eliminates the need for
high-cost wafers, growth of graded buffer layers, and
anti-reflection coatings, while permitting ideal solar spectrum
matching and capture of albedo radiation. The high risk-high payoff
and exploratory research fits the NSF EAGER program, as it involves
a radically unconventional approach with transformative potential to
enable cost-effective manufacturing of high-efficiency TDM solar
cells.
Multi-Color Anisotropy Measurements of Cosmic Near-Infrared
Extragalactic Background Light with CIBER2
PI: Michael
Zemcov
May 2016 - July 2019
The Rochester Institute of Technology team is responsible for the
delivery of a cryogenically-operable star tracking camera for
attitude control of the CIBER-2 payload. RIT is building, testing,
and delivering this camera to Caltech for integration into the full
experiment by the beginning of Year 2. RIT is also responsible for
delivering the associated documentation and interface information to
both Caltech and NASA by the end of Year 2. The RIT team is also
responsible for assisting with: (1) overall instrument design; (2)
integration of the payload system; (3) laboratory testing and
characterization; (4) flight planning and logistical requirements;
(5) deployment and flight efforts; (6) data reduction and
calibration; and (7) science extraction.
Understanding and Engineering Valence Band Structures of
III-Nitride Semiconductors for High-Efficiency Ultraviolet
Lasers and Emitters
PI: Jing Zhang
June 2016 -
November 2020
The objective of this project is to advance the fundamental
understanding of the physics of GaN-based active regions in nitride
heterostructures in order to enable high-efficiency
electrically-injected UV lasers and emitters with wavelengths
ranging from 220 nm to 300 nm at room temperature. Particularly,
this research focuses on the fundamental understanding of the
valence band structure of lll-Nitride wide bandgap gain active
region, and develop promising solutions for nanostructured quantum
wells and the fabrication approach of large area GaN-based UV laser
arrays. Those lasers would be a promising candidate for various
naval applications in sensing and communication.
Quantum Optical Semiconductor Chip and its Application to
Quantum communication
PI: Stefan Preble
May 2020 -
October 2020
Develop a quantum optical semiconductor chip and demonstrate its
application to efficient photonic entanglement, efficient logic
gates such as Hadamard and CNOT, and quantum communication protocols
through fiber optical channels.
On-Chip Quantum Photonic Sensors Using Entangled Photons and
Squeezed States
PI: Stefan Preble
October 2019 -
September 2021
As a part of this project, we have designed and tested new
components that are more efficient and effective at manipulating the
physical properties of light. These results have also demonstrated
unique applications in quantum information science specifically for
processing and sensing. We have also started laying out the design
work for a different integrated photonics platform, aluminum
nitride, which will be fabricated in a standard CMOS foundry.
TDM Solar Cells: Bifacial III-V Nanowire Array on Si Tandem
Junctions Solar Cells
PI: Parsian Mohseni
May 2017 -
October 2020
Escalating trends in global energy consumption mandates like
increased national energy independence and mounting alarm regarding
anthropogenic climate change, all demand improved sustainable energy
solutions. While the theoretical power generation potential of solar
photovoltaics (PV) in the United States is greater than the combined
potential of all other renewable resources, substantial market
penetration of PV and realization of grid-parity have been
obstructed by high materials and manufacturing costs, as well as
limitations in solar power conversion efficiencies (PCE). A pressing
need exists for tandem solar cells utilizing two dissimilar
materials (TDM) or more that are capable of PCE values beyond the
~30% Shockley-Queisser limit. In this program, we explore a
transformative, bifacial solar cell design that employs arrays of
TDM III-V compound semiconductor nanowires in tandem with a thinned,
intermediate Si sub-cell. The use of epitaxial nanowire arrays
overcomes the lattice matching criteria and enables direct III-V on
Si monolithic integration. This design eliminates the need for
high-cost wafers, growth of graded buffer layers, and
anti-reflection coatings, while permitting ideal solar spectrum
matching and capture of albedo radiation. The high risk-high payoff
and exploratory research fits the NSF EAGER program, as it involves
a radically unconventional approach with transformative potential to
enable cost-effective manufacturing of high-efficiency TDM solar
cells.
The technical approach of this EAGER project relies on selective-area heteroepitaxy of a GaAsP (1.75 eV) nanowire array on the top surface of a thinned Si (1.1 eV) sub-cell by metal-organic chemical vapor deposition. A bifacial, three dissimilar materials, tandem junction device is formed via monolithic integration of a backside InGaAs (0.5 eV) nanowire array. The vertical nanowires comprising the top- and back-surface arrays contain radially segmented p-i-n junctions serially connected to the central Si sub-cell via epitaxial tunnel junctions. This design enables absorption of broadband incident solar energy as well as albedo radiation. Standard lattice-matching constraints are overcome via strain relaxation along nanowire free surfaces. Therefore, ideal spectral matching is realized without a need for graded buffer layers or dislocation mediation strategies. Use of vertical nanowire arrays with coaxial p-i-n junction geometries permits key advantages, including near-unity absorption of solar irradiance at normal and tilted incidence without the use of anti-reflection coatings, decoupling of photon absorption and carrier collection directions, and dramatic reduction of 95% in epitaxial volumes. Rigorous modeling of device parameters will be iteratively coupled with extensive materials characterization and property correlation experiments for optimization of III-V sub-cell structure on the single nanowire and ensemble array levels. The ultimate target of this work is demonstration of a functional bifacial, three dissimilar materials, nanowire-based tandem junction solar cell with one Sun power conversion efficiency of 30% or better.
Past Projects
AIM Photonics TAP004 and TAP005 (Test Assembly and Packaging Hub
Planning)
PI: Stefan Preble
October 2015 - June 2017
This project enables the technologies being used at AIM Photonics
testing assembly and packaging (TAP) facility in Rochester, NY. The
organization of the TAP hub project is along the following technical
categories of Optical I/O, Testing, Metrology, and Reliability. The
hub is equipped for 2.5 electronic/photonic packaging, attach and
align tools for fibers and fiber/waveguide arrays, functional
testing equipment, as well as a full line of metrology tools. The
project emphasizes the most significant gaps in the manufacturing of
Photonic Integrated Circuit (PIC)-enabled systems by enabling and
ensuring access to standardized package designs, integrating the
photonic, electronic, and physical designs, ensuring that metrology
tools are available to test the physical integrity of the packages,
and providing functional testing for digital, analog, and
sensor-based photonic systems. The current activities are
concentrating on establishing processes, and packaging design and
test support for AIM Photonics members through the Rochester Hub.
The project also produces AIM Photonics Test, Assembly and Packaging
Guide, which is included in the AIM Photonics Process Design Kit
(PDK) releases.
New Infrared Detectors for Astrophysics
PI: Don Figer
June
2012 - May 2017
This project aims to develop infrared detectors that use HgCdTe
material grown on silicon substrates (MCT/Si). Traditionally,
manufacturers use CdZnTe (CZT) substrates because they have the same
lattice spacing as MCT, providing fewer possibilities for undesired
energy states where atoms in the lattice do not meet. Unfortunately,
CZT substrates are expensive and come in small sizes. Both factors
increase the cost of MCT detectors. In contrast, Si wafers are
widely available and in large sizes. MCT/Si technology will
dramatically reduce the cost and size constraints imposed by CZT
substrates used in sensors for ground- and space-based astronomy
missions.
Previous work on this project included targeted design changes to MCT/Si detectors that improved operation. The CfD tested multiple detector lots designed and fabricated by Raytheon Vision Systems (RVS). As an example of a successful design change, RVS excluded epoxy backfilling from the thinning process during detector substrate removal. This decreased interpixel capacitance, or an undesired transfer of charge between pixels, caused by the epoxy filling.
Changes in the lot of detectors we received from RVS in late 2018 targeted improving dark current. Dark current measures signal when there is no illumination on the detector. As temperature increases, some lattice vibrations are larger than the bandgap energy of the detector material and cause an electronic transition to the conduction band, resulting in a signal. We take many long exposures with no illumination to measure dark current. F13 has a large tail in the dark current histogram, and only about 65% of all pixels have a dark current below 0.6 e'/s. We hypothesized that mismatches in the lattice of the HgCdTe and Si substrate formed coupled dislocations, resulting in higher dark current.
Developing THz Detector Technology for Inspection Applications
PI: Zoran Ninkov
July 2017 - June 2018
The terahertz frequency (THz) region provides a means of using
non-ionizing radiation to perform a variety of non-invasive sensing
tasks. Commercial cameras systems are available that utilize
microbolometer or pyroelectric detectors to detect THz wavelength
radiation, but these devices lack sensitivity, stability, or readout
speed. RIT and its collaborators at the University of Rochester and
Harris Corporation are developing a room-temperature imaging THz
frequency detector using Si-MOSFET (Silicon Metal Oxide
Semiconductor Field Effect Transistor) CMOS devices. The devices are
implemented into a focal plane imaging array for use in many
applications, such as transmission or penetration imaging and
spectroscopy. Technology for THz detection is often extremely
costly, due to either expensive detector materials or cryogenic
cooling systems. The devices tested here, however, are low-cost due
to the use of conventional room temperature silicon CMOS technology.
The devices operate from 170 to 250 GHz, with an additional detector
design fabricated for 30 THz (10 'm wavelength).
Imaging Polarimetry
PI: Zoran Ninkov
Imaging polarimeters utilizing the division-of-focal technique
present unique challenges during the data reduction process. Because
an image is formed directly on the polarizing optic, each pixel
'sees' a different part of the scene; this problem is analogous to
the challenges in color restoration that arise with the use of Bayer
filters.
Although polarization is an inherent property of light, the vast majority of light sensors (including bolometers, semiconductor devices, and photographic emulsions) are only able to measure the intensity of incident radiation. A polarimeter measures the polarization of the electromagnetic field by converting differences in polarization into differences in intensity. The microgrid polarizer array (MGPA) divides the focal plane into an array of superpixels. Each sub-pixel samples the electric field along a different direction, polarizing the light that passes through it and modulating the intensity according to the polarization of the light and the orientation of the polarizer. We are actively looking at techniques for hybridizing microgrid polarizer arrays to commercial CID, CCD, and CMOS arrays.
Cosmic Radiation Damaged Image Repair project (CRDIR)
Advisor: Don Figer
RIT has embarked on the Cosmic Radiation Damaged Image Repair
project (CRDIR) involving Dr. Donald Pettit, NASA Astronaut &
International Space Station astrophotographer. This project is being
conducted by graduate and undergraduate student researchers under
the guidance of Dr. Donald Figer, Director of CfD.
Students have a unique opportunity to communicate with an active American astronaut in the process of solving a significant image processing issue. The scientific process these students follow toward a solution provide valuable experience that these students will carry with them in their professional lives.
RIT is providing a sophisticated 'image enhancement' software program which specifically addresses degraded images taken by astronauts 'on orbit', extending the useful lives of cameras, and in many cases making unacceptable 'noisy' images visually acceptable.
AIM Academy Photonic Integrated Circuit Design and Test
Education Curricula
PI: Stefan Preble
January 2019 -
December 2020
This project's long-term objective is the creation of a workforce of
proficient integrated photonic circuit designers. There is a clear
industry need for designers that are able to utilize Electronic
Photonic Design Automation (EPDA) methodologies to effectively
design functional photonic-electronic circuitry to drive the
integrated photonics industry into the future. The primary goal of
this project is to meet this need with the creation of integrated
photonic circuit design/test content to enable educators to teach
students and industrial practitioners the principles, methodologies
and practical knowledge of integrated photonic circuit design.
MRI: Acquisition of an Inductively Coupled Plasma Reactive-Ion
Etching System for Research and Education in Nanophotonics,
Nanoelectronics and Nano-Bio Devices
PI: Jing Zhang
September
2016 - August 2017
This Major Research Instrumentation (MRI) funding is supporting the
acquisition of an inductively coupled plasma reactive-ion etching
(ICP-RIE) system to enable fundamental research and education in
nanophotonics, nanoelectronics and nano-bio devices. The objective
of this MRI acquisition is to facilitate new and existing
multidisciplinary research in science and engineering, enable
educational curriculum development, and promote outreach activities
at Rochester Institute of Technology (RIT). The ICP-RIE system has
the capability for photonic, electronic and bio device fabrication
that does not exist presently at RIT and Rochester region.
The ICP-RIE system provides dry etching capability for various material systems such as compound semiconductors, dielectric materials, and metals with fast etching rate, well-controlled selectivity, and promising uniformity. The instrument is essential to enable fundamental research and education on III-Nitride based light emitting diodes (LEDs) and lasers, seamless integration of robust and low-powered III-V quantum dot (QD) lasers with silicon photonics, III-V tunneling field effect transistor, memory devices for computing, QD and nanowire photovoltaics, III-Nitride photodetectors for inertial confinement fusion research, nanoplasmonic devices, and nan-bio devices for efficient biomolecule transfer. The instrument will be the first ICP dry etcher tool at RIT, which will be shared by research groups across all disciplines in science and engineering with students trained from Microsystems Engineering Ph.D. program and Ph.D. in Engineering program. The tool will also be shared by external research groups in Rochester region to enhance research and collaborations between RIT and other colleges, national labs, and small businesses in the region.
The ICP-RIE system will be designated as a shared user facility, available to new curriculum and lab section development on device fabrications for both undergraduate and graduate students at RIT, whom can be trained for next-generation scientists and engineers. The fabrication capability provided by the proposed instrument benefits curriculum development at RIT for several fundamental courses and lab sections focused on nanofabrication and semiconductor devices. Demonstration experiments on photonic and electronic devices can also be designed to K-12 students and teachers through RIT outreach activities by the use of the dry etcher, which can stimulate K-12 students' interest to pursue science, technology, engineering, and mathematics (STEM) disciplines in the future. Connectivity with such demonstration experiments will also be promoted to train existing women and underrepresented minority students at RIT.
Quantum Optical Resonators: a building block for quantum
computing and sensing systems
PI:Stefan Preble
August
2014 - July 2018
The overall goal of this project is to experimentally demonstrate
the quantum optical response of ring resonators and use them as a
robust building block for quantum information processing. We have
shown that ring resonators operating in the quantum regime exhibit a
resonant response that depends on the photon state. Unlike beam
splitters, which operate with maximum fidelity with only one set of
parameters, the unique passive feedback in ring resonators ensures
high fidelity quantum interference over effectively an infinite
device parameter space. The devices compact size and ability to be
reconfigured dynamically with low energy requirements ensures that
ring resonators are the ideal building block for realizing complex
quantum optical circuits.
Imaging Polarimetry with Microgrid Polarizers
PI:Zoran
Ninkov
September 2012 - December 2015
Polarization is an intrinsic property of light, like frequency or
coherence. Humans have long benefited from our ability to
distinguish light of different frequency based on its color.
However, our eyes are not sensitive to the polarization of light.
Devices to measure polarization are relatively rare and expertise in
polarimetry even more so. Polarization sensors based on
micropolarizer arrays appear to be the first devices capable of
bringing polarimetric capability to a wide range of applications.
Whereas previous polarimeters were built to perform very specific
measurements, the same micropolarizer-based camera can be used on a
telescope, a microscope, or with a conventional camera lens.
THz Modeling and Testing
PI:Zoran Ninkov
July 2016 -
June 2017
A group consisting of Harris engineers, RIT scientists, University
of Rochester engineers and scientists designed and manufactured a
room temperature silicon Complementary metal'oxide'semiconductor
(CMOS) imager for terahertz (THz) frequencies using metal-oxide
semiconductor field effect transistors (MOSFETs). THz frequencies
have been largely unexplored due to high absorption within water,
however there has been an increase in interest with the rise in
high-altitude and space-based telescopes. Emission lines in spectra
within the THz regime exhibit cool molecular gas which traces
protoplanetary disks and star formation rates within galaxies. This
technology also has other applications within the medical and
security fields because of the nonionizing, non-harmful nature of
THz radiation.
Engineering Verification Test (EVT) Station
Stefan Preble
A collaborative effort between Columbia University, RIT, and
Precision Optical Transceivers, this project will develop testing
capabilities for the Testing Assembly and Packaging (TAP) Hub that
AIM Photonics is building in downtown Rochester, NY. The EVT is a
generalized testing tool for validating functionality and
performance specifications of integrated silicon circuits, such as
optical switches, transceivers, photonic biosensors, lasers, etc. It
is a crucial element of AIM Photonics and represents a
much-anticipated capability that customers will use to prove the
validity of their circuit designs. The EVT system will first be used
for the testing of a C form-factor pluggable (CFP) based package
that is currently being developed at Columbia University for the
purpose of controlling complex photonic integrated circuits (PICs),
including high speed transceivers and photonic switch fabrics. The
EVT will later be able to test a quad small form-factor pluggable
(QSFP) based package that is being developed by Precision Optical
Transceivers. As the project proceeds, work will continue to be done
to create software for functional and performance tests in order to
validate the EVT station for photonic switches and more.
Concept Study Report Preparation for SPHEREx MIDEX Phase A
PI: Michael Zemcov
February 2018 - September 2018
SPHEREx is a planned NASA mid-range explorer (MID EX) that will
perform an all-sky spectral survey of the in near-infrared bands.
SPHEREx was recently selected for a Phase A study, and work is
required to refine the instrument concept before a concept study
report is due to NASA in mid-2018. This program funds activity at
RIT to help refine details of the instrument, observation strategy,
and to support publishing them as reports for NASA and the
community.
SOAR/SAM Multi Object Spectrograph (SAMOS)
PI: Zoran
Ninkov
September 2016 - August 2021
RIT is collaborating in a project to build the SOAR
Multi-Object-Spectrograph (SAMOS) for the SOAR 4.1 m telescope.
SAMOS takes advantage of the Ground Layer Adaptive Optics laser
guided system that routinely delivers exceptional image quality at
visible wavelengths over a large field. There is great demand for a
facility capable of efficiently performing spectroscopic studies of
crowded fields, e.g., the Magellanic Clouds, globular dusters, the
galactic bulge, and galaxy clusters. SAMOS can take hundreds of
spectra in parallel over the full corrected field using a commercial
Digital Micromirror Device (DMD) as a slit selector mechanism.
Cosmic Dawn Intensity Mapper
PI: Michael Zemcov
April 2017 - August 2018
The NASA Probe-Class Mission Concept Cosmic Dawn Intensity Mapper
(CDIM) is designed to make pioneering observations of the
Lyman-alpha, H-alpha and other spectral lines of interest throughout
the history of the cosmos. Capable of spectro-imaging observations
between 0.7 to 7 'm in the near-Infrared, CDIM will help move the
astronomical community from broad-band astronomical imaging to
low-resolution (R=300-400) 3D spectro-imaging of the universe to
perform the science of the 2030s. In this program, we are performing
a mission concept study that will be submitted to both NASA and the
US astronomical community in preparation for the 2020 Astronomy
Decadal Report. The RIT team lead by Dr. Michael Zemcov is
performing initial engineering and instrument design work in support
of detailed science requirements being derived by the science team.
This work has led to a fully functional instrument sensitivity
calculator, and a complete mission initial engineering study
performed by an RIT Engineering MS student.
Selective Area Epitaxy of III-V Nanocrystals on Graphene and
MoS2 for Flexible Optoelectronics Application
PI: Parsian
Mohseni
May 2016 - August 2017
Atomically-thin, two-dimensional nanomaterials such as single-layer
graphene (SLG) and monolayer molybdenum disulfide (MoS2) have
emerged as essential building blocks that can enable the development
of a widely encompassing class of next-generation nanoelectronic
devices. However, these monolayer materials have a critical drawback
for applications in optoelectronic, in that they are either
inherently incapable (i.e., SLG) of, or are fundamentally
inefficient (i.e., MoS2) in, absorbing and emitting light. The
purpose of this project is to overcome this limitation through the
monolithic integration of highly optically efficient 111-V
semiconductor nanostructures with SLG and MoS2 by selective area
epitaxial (SAE) crystal growth. This effort aims to combine the
characteristic benefits of monolayer materials and 111-V
nanocrystals through the synthesis of novel types of hybrid
nanostructures. The correlation of extensive structural and optical
characterization experiments enables the optimization of SAE growth
parameters, and subsequently enable the development of low-cost and
high-efficiency flexible light emitting diodes and photodetectors.
A Cryogenic Optical Camera for Attitude Control of
Low-Temperature Sub-Orbital Payloads
PI: Michael Zemcov
May 2016 - May 2019
CCDs have been the dominant optical-wavelength detector architecture
for high-end optical imaging applications for decades. However, CCDs
are inoperable below 120 K due to electron freeze-out effects,
prohibiting their use in space exploration applications requiring
cryogenic temperatures. Megapixel CMOS devices are known to work at
temperatures as low as 10 K, suggesting that imaging devices based
on this technology would operate in cryogenic environments without
requiring active heating. In this program, we take the first step to
maturing this technology for flight applications in the cryogenic
regime by developing and flying an attitude-sensing camera employing
a low noise, high quantum efficiency cryogenic CMOS detector. By
implementing an alternative imaging technology, we address NASA's
major objective to 'transform NASA missions and advance the Nation's
capabilities by maturing crosscutting and innovative space
technologies.' This technology enables instruments ranging from
actively cooled star trackers for sounding rockets to
low-temperature deep space cameras.
Development of the Next Large Space Telescope
Co-Chair:
Don Figer
CfD Director Figer is Co-chairing a NASA technology working group
with Eric Schindhelm (Ball Aerospace & Technologies Corp.) to assess
the current state of the art in detectors for ultraviolet, optical,
and infrared wavelengths. This activity is a precursor to the plans
for the further development of competing technologies to fly on the
next large space telescope after the James Webb Space Telescope
(JWST). The new telescope has a notional design and is generically
being called the Large Ultraviolet Optical Infrared Survey (LUVOIR)
telescope. Just as with previous NASA missions, this somewhat
awkward name will be likely be replaced with a name that
memorializes a prominent figure in the advancement of science.
The LUVOIR point design considers the use of a large (8-12 m) primary mirror that capitalizes on the emerging heavy lift capabilities, such as the Big Falcon Rocket (BFR) to be made by SpaceX and the Space Launch System (SLS) being developed by NASA and partners. Just like JWST, the telescope will be launched in a furled configuration to be expanded and phased on orbit.
The detector technology working group solicited information concerning the technology readiness level of approximately a dozen competing detector types that could fly on LUVOIR, either in the wide area imaging camera or the coronagraph instrument. For most science applications on the proposed telescope, detectors will need to have very low noise. In fact, for the goal of measuring the atmospheres of exoplanets, the detectors will need to have single photon sensitivity.
Rare Massive Stars Near the Galactic Center
Collaborator:
Don Figer
CfD Director Figer, and collaborators, identified more massive stars
near the Galactic center (GC). Some of these stars are of the rarest
types, representing exotic evolutionary stages of the most massive
stars.
In one study, the team validated a hypothesis that they made in the late 1990's that the enigmatic red stars in the Quintuplet Cluster are of the rare late-type carbon Wolf-Rayet type. There are only a few hundred such stars, out of a few hundred billion, in the Galaxy. These types of stars are evolved forms of stars that have approximately a hundred solar masses of material. To find five such stars in one cluster is unprecedented.
In a paper in the Astrophysical Journal, we reported the detection of a number of emission lines in the 1.0'2.4 'm spectra of four of the five of the Quintuplet stars. Spectroscopy of the central stars of these objects is hampered not only by the large interstellar extinction that obscures all of the objects in the GC, but also by the large amounts of warm circumstellar dust surrounding each of the five stars. The pinwheel morphologies of the dust observed previously around two of them are indicative of Wolf'Rayet colliding wind binaries; however, infrared spectra of each of the five have until now revealed only dust continua steeply rising to long wavelengths and absorption lines and bands from interstellar gas and dust. The emission lines detected, from ionized carbon and from helium, are broad and confirm that the objects are dusty late-type carbon Wolf'Rayet stars.
In another study, published in Astronomy and Astrophysics, CfD Director Figer was part of a team that reported a new stellar census of massive stars in the Quintuplet Cluster.
The Quintuplet is one of the most massive young clusters in the Galaxy and thus holds the prospect of constraining stellar formation and evolution in extreme environments. Current observations suggest that it comprises a remarkably diverse population of very high-mass stars that appears difficult to reconcile with an instantaneous star-formation event. The team used new, and existing, observations of stars in the cluster to better understand the origin and nature of the cluster, including from the Near Infrared Camera and the infrared channel of the Wide Field Camera 3, both on the Hubble Space Telescope, and SINFONI and KMOS on the Very Large Telescope. In all, the team observed approximately 100 cluster members.
Spectroscopy of the cluster members reveals that the Quintuplet is more homogeneous than previously expected. All supergiants are classified as either O7-8 Ia or O9-B0 Ia, with only one object of earlier (O5 I-III) spectral type. These stars form a smooth morphological sequence with a cohort of seven early-B hypergiants and six luminous blue variables and WN9-11h stars; these comprise the richest population of such stars of any stellar aggregate known. In parallel to these, we identify a smaller population of late-O hypergiants and spectroscopically similar WN8-9ha stars. No further H-free WC or WN stars are identified, leaving an unexpectedly extreme ratio of 13:1 for this population.
Photometric data reveals a subset of the O9-B0 supergiants to be unexpectedly faint, suggesting they are both less massive and older than the greater cluster population. Finally, no main sequence objects were identifiable. Due to uncertainties in the correct extinction law, it was not possible to quantitatively determine a cluster age via isochrone fitting.
Fortuitously, we find an impressive coincidence between the properties of cluster members preceding the hydrogen-free WR phase and the evolutionary predictions for a single, non-rotating 60 MSun star; in turn this implies an age of ~3.0 - 3.6 Myr for the Quintuplet. Neither the late O-hypergiants, nor the low luminosity supergiants, are predicted by such a path; we suggest that the former result from either rapid rotators are the products of binary driven mass-stripping, while the latter may be interlopers. The hydrogen-free WRs must evolve from stars with an initial mass in excess of 60 MSun, but it appears difficult to reconcile their observational properties with theoretical expectations. This is important since one would expect the most massive stars within the Quintuplet to be undergoing core-collapse/SNe at this time; since the WRs represent an evolutionary phase directly preceding this event their physical properties are crucial to understanding both this process and the nature of the resultant relativistic remnant. As such, the Quintuplet looks set to provide unique observational constraints on the evolution and death of the most massive stars forming in the local, high-metallicity Universe.
Development of Si-MOSFET CMOS Technology for Terahertz Detection
PI:Stefan Preble
RIT is developing a silicon MOSFET CMOS imager to detect terahertz
(THz) frequencies in a collaboration with the Center for Emerging
and Innovative Sciences (CEIS) at the University of Rochester and
Exelis Geospatial Systems. Creating an asymmetrical design within
the FETs, increases the THz response. The current device being
tested was designed with 15 individual test transistors with varying
design dimensions and antennas along with an array of transistors
for an imager. These test structures are being evaluated at RIT to
determine the best design for terahertz detection for future imager
designs. An advantage of this detector technology is that these
MOSFETs do not have to be cooled to extreme temperatures like
microbolometers. This project's goal is to advance knowledge of the
detection mechanism, lead to the creation of an integrated imaging
system, and has many different applications.
THz frequencies have been largely unexplored due to high absorption within water, however there has been an increase in interest with the rise in high-altitude and space-based telescopes. Emission lines in spectra within the THz regime exhibit cool molecular gas which traces protoplanetary disks and star formation rates within galaxies. This technology also has other applications within the medical and security fields because of the non ionizing, non-harmful nature of THz radiation.
Characterization of Inter-Pixel Capacitive Coupling in
Hybridized HgCdTe Arrays
PI:Zoran Ninkov
Inter-Pixel Capacitance (IPC) is a mechanism for deterministic
electronic cross talk that results from coupling fields between
adjacent pixels as a signal is collected and stored. Simulation of
small arrays from first principles using software which
simultaneously solves Poisson's equation and the Drift Diffusion
equations allows for characterization of this coupling across a
broad range of design parameters as well as across various
environment parameters. Due to the deterministic nature of this
cross-talk characterization results in correction.
This project is currently working on characterization of HgCdTe arrays hybridized using indium bumps to h4RG readout circuits akin to those to be used in the James Webb Space Telescope's (JWST) NIRcam. Successful characterization across environment parameters will result in an increase in final image quality from JWST's NIRcam and any device using a similar detector while also introducing new design considerations for future generations of sensor.
MacEtch of III-V Compounds Using Alternative Catalysts
PI:
Parsian Mohseni
Metal-assisted chemical etching (MacEtch) is an anisotropic,
solution-based nanofabrication process that combines the benefits of
conventional wet-etching and plasma-based ion etching. The MacEtch
process relies on site-specific, catalytic oxidation of a
semiconductor surface by a patterned noble metal layer, followed by
preferential dissolution of the selectively oxidized regions.
Continuous repetition of oxidation-dissolution cycles in a single
MacEtch bath results in the metal layer sinking into the
semiconductor such that vertical nanostructures are left in the path
of the metal layer, having geometries that are complementary to the
geometry of the patterned metal. In the EINS lab, we are interested
in exploring the fabrication of III-V semiconductor nanostructures
using non-conventional metallic catalysts composed of
carbon-nanotubes and graphene. In this manner we define novel
nanofabrication paradigms that enable low-cost and clean
alternatives to conventional ion-based etching procedures, offering
high-aspect ratio features with atomically-abrupt sidewall
termination. Novel device applications in high-efficiency
solid-state lighting and tri-gated nanofin-based field effect
transistors have already been demonstrated using on MacEtch
fabrication.
Selective Area Epitaxy on Foreign Substrates
PI:Parsian
Mohseni
The growth of various nanostructures, including nanowires and
nanofins, by metal-organic chemical vapor deposition (MOCVD) is
investigated through a unique crystal synthesis process known as
selective area epitaxy (SAE). The SAE method relies on an oxide
template with predefined windows that specify the location of
preferential epitaxial atomic assembly. Growth rate enhancement, as
defined by the oxide template, allows for the controlled epitaxy of
arrays of vertical, III-V compound semiconductor nanostructures
without the use of foreign catalytic or seeding agents. Based on the
SAE technique, the EINS lab has demonstrated growth of InAs, InGaAs,
GaAs, GaAsP, and GaP nanowire and nanofin arrays on Si substrates
with 100% yield over large, wafer-scale areas. Our current projects
aim to understand the growth kinetics of III-V nanosystems
interfaced with Si and 2-dimensional nanomaterials such as graphene
and monolayer transition metal dichalcogenides; to characterize the
novel material properties offered by these hybrid nanosystems; and
to demonstrate their utility in innovative photovoltaics and
optoelectronics solutions.
Enhancing the UV/VUV Sensitivity of CMOS Image Sensors
PI:
Zoran Ninkov
July 2016 - June 2017
Charge-coupled devices (CCDs) and CMOS arrays have limitations in
spectral sensitivity as delivered from the foundry. The front-side
gate structure of a CCD is absorptive at ultraviolet (UV)
wavelengths. For high efficiency, CCDs are back illuminated, which
is expensive to do, and unfortunately the Si substrate is highly
reflective. Additionally, UV photons have a very short absorption
length in silicon. The electron'hole pairs produced by the photon
interaction are trapped at the back surface and therefore never
reach the accumulation phase gate. These issues have resulted in
difficulty in producing efficient CCD-based UV/Far UV (FUV)
detectors. Delta doped back illuminated CCDs are the best solution
to this problem. Anti-reflection (AR) coating the CCD is difficult
in this spectral region as the coatings available only provide
improvement over a narrow spectral region. This is especially
concerning for application in UV/FUV spectroscopy where a wide
spectral range needs to be recorded simultaneously (e.g., in UV
plasma spectroscopy).
High Performance Integrated InAs Quantum Dot Laser Based Si
Photonics Optical Transceiver
PI: Stefan Preble
The project is focused on the realization of high performance
optical transceivers integrated onto a silicon chip using robust
InAs quantum dot lasers. Specifically, this project will overcome
one of the largest challenges in silicon photonics, which is the
seamless integration of robust and low-powered lasers with other
silicon photonics devices, where the lasers need to operate at
relatively high ambient temperatures (70-80 'C) and the emission
wavelengths need to be varied to achieve a multichannel laser array
with large transmission bandwidth. Our approach is to bond III-V
heterostructures that contain quantum dots onto silicon substrates.
Quantum dots (QD) possess 3D confinement and delta-function like
density-of-states (DOS), and as a result, and unlike their quantum
well counterparts, have good temperature stability, low power
consumption, high differential gain, and zero chirp and a-factor. In
addition, they are spectrally broad due to large size distribution
of the quantum dots, and as a result can be used to realize
broadband laser sources. Furthermore, in order to realize high gain,
and as a result low threshold power, we are uniquely aiming to
directly integrate the lasers to waveguides through a butt-joint
waveguide coupling scheme. This will enable all of the transceiver
components to be integrated into the same plane, significantly
increasing performance and decreasing the overall footprint ' in
turn, allowing denser integration for overall higher bandwidth at
lower powers.
Measuring the Pixel Response Function of Kepler CCDs to Improve
the Kepler Database
PI: Zoran Ninkov
February 2016 - February 2019
Stellar images taken with telescopes and detectors in space are
usually undersampled, and to correct for this, an accurate pixel
response function is required. The standard approach for HST and
Kepler has been to measure the telescope PSF combined ("convolved")
with the actual pixel response function, super-sampled by taking
into account dithered or offset observed images of many stars. This
combined response function has been called the "PRF". However, using
such results has not allowed astrometry from Kepler to reach its
full potential. Given the precision of Kepler photometry, it should
be feasible to use a pre-determined detector pixel response function
(PRF) and an optical point spread function (PSF) as separable
quantities to more accurately correct photometry and astrometry for
undersampling. Wavelength (i.e. stellar color) and instrumental
temperature should be affecting each of these differently.
Discussion of the PRF in the "Kepler Instrument Handbook" is limited to an ad-hoc extension of earlier measurements on a quite different CCD. It is known that the Kepler PSF typically has a sharp spike in the middle, and the main bulk of the PSF is still small enough to be undersampled, so that any substructure in the pixel may interact significantly with the optical PSF.
Both the PSF and PRF are probably asymmetric. The Center for Detectors is measuring the PRF for an example of the CCD sensors used on Kepler at sufficient sampling resolution to allow significant improvement of Kepler photometry and astrometry, in particular allowing PSF fitting techniques to be used on the data archive.
Quantum Silicon Photonics Measurement System
PI: Stefan
Preble
September 2016 - September 2017
The primary objective of this Defense University Research
Instrumentation Program (DURIP) project is to demonstrate quantum
photonic circuits on a silicon chip by using a quantum photonic
measurement system with ultra-low noise and high efficiency. Quantum
information science has shown that quantum effects can dramatically
improve the performance of communication, computational and
measurement systems. However, complex quantum systems have remained
elusive due to the large number of resources (photon sources,
circuits and detectors) that need to be tightly integrated. Dr.
Stefan Preble is realizing breakthroughs by integrating quantum
circuits on a silicon chip and developing scalable building blocks
based on ring resonators, which dramatically reduce the footprint of
the circuits and enable novel functionalities. The quantum
measurement system, consisting of a low-noise tunable laser and high
efficiency single photon detectors, is a critical enabler of these
Quantum Silicon Photonic chips.
Integrated Photonics Education at RIT
PI: Stefan Preble
January
2016 - June 2017
The objective of this project is to support AIM Academy (the
education arm of AIM Photonics) by providing education modules for
integrated photonics design, manufacturing, packaging and testing.
We are also working to educate students, workforce, veterans and the
community with: short courses, degree courses, establish an
integrated photonics practice facility, assess workforce needs and
develop an ME degree in Integrated Photonics Manufacturing in
collaboration with MIT.
A Cryogenic Optical Camera for Attitude Control of
Low-Temperature Sub-Orbital Payloads
PI: Michael
Zemocov
May 2016 - May 2019
Charge coupled detectors (CCDs) are inoperable below 120K due to
electron freeze-out effects and therefore, problematic in cryogenic
applications. An alternative optical sensing technology, the
scientific complementary metal-oxide-semiconductor (sCMOS) detector,
offers the possibility of mega-pixel science-grade optical cameras
operable to - IOK. The promise of a fully cryogenic optical detector
is a compelling technology for NASA because it does not require
active heating in the space environment. Such a detector enables
instruments ranging from actively-cooled star trackers for sounding
rockets to low-temperature deep space cameras. As a first step, The
Center for Detectors is developing and flying an attitude-sensing
camera employing a low noise, high quantum efficiency cryogenic
sCMOS detector on a Black Brant IX sub-orbital vehicle. Images from
the T=77K 5.5 mega-pixel sensor is processed by on-board software
and pointing information is used to dynamically control the attitude
of the payload with gyroscopes. The instrument design, fabrication,
flight operations and data analysis is being performed by a diverse,
multi-disciplinary team of undergraduate students to provide
hands-on experience on a flight project under the leadership of a
graduate student mentor and an experienced PI. The students are
responsible for mechanical, optical, and electronic engineering
activities; firmware and algorithm development; flight planning and
operations; and project management, documentation control, and
reporting. Following a successful initial flight, this system will
fly on a NASA astrophysics payload to measure extragalactic light
from the cosmic infrared background.
A Data Analysis Pipeline Simulator for a Millimeter-Wavelength
Imaging Spectrometer
PI: Michael Zemocov
May 2016 -
August 2017
The Center for Detectors is conducting a design study for software
and data analysis for the Tomographic Ionized-carbon Mapping
Experiment (TIME-Pilot) instrument, which is designed to make
pioneering measurements of the redshifted 157.7 'm line of singly
ionized carbon [CIIJ from the Epoch of Reionization (EoR). The EoR
is the period in the Universe's history during which the first stars
and galaxies formed, and whose intense ultra-violet (UV) radiation
fields ionized the intergalactic medium. The New Worlds, New
Horizons 2010 Astrophysics Decadal Report recognized the EoR as one
of five scientific discovery areas where "new technologies,
observing strategies, theories, and computations open . . .
opportunities for transformational comprehension". This
investigation is breaking ground for future investment from
government and private funding agencies by improving our
understanding of the instrument design and expected performance.
Air Force STTR Phase 1 AF16-AT01: "Wafer-Level
Electronic-Photonic Co-Packaging"
PI: Stefan Preble
November 2016 - August 2017
This program is developing flexible, low-cost packaging techniques
for largescale, integrated optoelectronic systems based on
heterogeneously integrated photonic and electronic chips.
Ultracompact Graphene Optical Modulators
PI: Stefan
Preble
June 2013 - May 2017
The objective of this research is to explore ultracompact graphene
optical modulators for future on-chip optical communications. The
approach is to systematically explore the unique electro-optic
properties of graphene, and to greatly enhance the interaction of
graphene with light based on novel waveguides and platforms. In
particular, graphene in a waveguide can be tuned with anomalous
optical properties with a suitable gate voltage, which is being
employed to develop the modulators.
This project is systematically exploring novel graphene-sandwiched optical waveguides based on the unique properties of graphene. This research is one of the first experimental attempts to demonstrate optical modulators at nanoscale, and one of the first systematic explorations of graphene for all-optic modulation. The research results may revolutionize nanophotonic technology and on-chip optical interconnects, and contribute to the fundamental theory and techniques for newly developed Graphene Optoelectronics and Graphene and 2D Semiconductor Physics.
Graphene is a topic that is of great interest to the general public. The outreach activity, "From Graphite to Graphene", is helping STEM education by introducing K-12 students to the science and fabrication of nanotechnology for a wide range of applications. The students involved in this research are participating in nanotechnology development, and the results developed from the research activities will be incorporated into several college courses. Collaboration with external companies may commercialize valuable products for industrial and military applications. Under-represented students from Women in Engineering and North Star Program are involved in this project.
Single Photon Counting Detectors for NASA Astronomy Missions
PI: Don Figer
September 2013 - August 2015
Single photon counting detectors have the potential to be the next
big advancement for NASA astronomy missions. The ability to count
single photons facilitates science goals that are impossible even
with current state-of-the-art detectors. Single photon counting
detectors are the future, and many different implementations are in
development. In the next 20 years, many NASA missions requiring
single photon counting will be proposed, but which single photon
counting detector implementations best suit the performance needs of
NASA's astronomy programs? The goal of the proposed research is to
characterize (theoretically and physically) three unique
implementations of single photon counting detectors, benchmark their
operation over a range of performance characteristics, and provide
comprehensive justification for the superiority of one of the
implementations for each of these NASA astronomy applications:
exoplanet detection, high-contrast imaging, adaptive optics, and
array-based LIDAR.
The research plan in this project includes simulation, characterization, and evaluation of the performance of three types of semiconductor photon counting detectors for use in NASA astronomy missions: Geiger-mode (GM) APDs, linear-mode (LM) APDs, and Electron Multiplying (EM) CCDs.
The main goal of this project is to provide the basis of comparisons for several types of fundamentally different single photon counting detectors by producing a table of comparisons and recommendations for various applications. All detectors must be sensitive to single photons, be scalable to large array formats, and have high QE (in the visible, UV, NIR, IR, and Far-IR wavelengths). This research is advancing preliminary work by adding new characterization methods and performance benchmarks, and by comparing the different devices at predetermined milestones during the project. The recommended detector(s) should function well at high readout frequencies without significant read noise (leading to improved temporal sampling), have very low noise for increased SNR at low fluence levels, and be implemented (or able to be in the near future) on large arrays. Even though single-photon counting detectors share a common performance benchmark (discerning individual quanta), differences between various implementations make some more efficient than others.
New Infrared Detectors for Astrophysics
PI: Don Figer
June
2012 - May 2017
Infrared arrays with HgCdTe as the light-sensitive layer, such as
have been developed up to sizes 2048x2048 pixels for the James Webb
Space Telescope, a re near-ideal detectors for imaging and
spectroscopy in the region ~1-5 'm. However current construction
requires fabrication on CdZnTe substrates, which are expensive and
limited in availability. The key to making larger (up to
14,000x14,000 pixels) and less expensive infrared detectors lies in
using silicon wafer substrates, since large silicon wafers are
common in the high volume semiconductor industry and their
coefficient of thermal expansion is well-matched to that of the
silicon readout circuits.
While the use of silicon substrates has been a major goal in the field of developing infrared detectors, the main limitation over the past 15 years has been the large lattice spacing mismatch between silicon and commonly-used infrared light-sensitive materials. The mismatch causes defects that can result in higher dark current, or valence holes that lead to reduced quantum efficiency and image persistence.
Enlisting the expertise and fabrication capabilities of Raytheon Vision Systems, detector expert Dr. D. Figer of the Rochester Institute of Technology plans to deposit the HgCdTe light-sensitive layer on silicon using the very promising technique of Molecular Beam Epitaxy (MBE). By maintaining vacuum during MBE processing, defect density has been shown to be reduced and the resulting prototype devices have achieved the anticipated performance. Very large, affordable infrared arrays is essential for making optimum use of the proposed ~30m class ground-based telescopes and their availability has clear implications for fields beyond astronomy, including medical imaging and remote sensing.